| 等级 Grade | Z级
Zero MPD | 工业级
Production | 研究级
Research Grade | 试片级
Dummy Grade |
| 直径 Diameter | 50.8 ±0.38 mm, 76.2 ±0.38 mm, 100±0.5 mm, 150±0.25mm |
| 厚度 Thickness | 4H-N | 350 μm±25μm |
| 4H-SI | 500 μm±25μm |
| 晶片方向 Wafer Orientation | Off axis : 4.0° toward 1120 !±0.5° for 4H-N On axis :<0001>±0.5° for 4H-SI |
| 微管密度 Micropipe Density | ≤1 cm-2 | ≤5 cm-2 | ≤15 cm-2 | ≤50 cm-2 |
| 电阻率 Resistivity | 4H-N | 0.015~0.028 Ω·cm |
| 6H-N | 0.02~0.1 Ω·cm |
| 4/6H-SI | >1E5 Ω·cm | (90%) >1E5 Ω·cm |
| 主定位边方向 Primary Flat | {10-10}±5.0° |
| 主定位边长度 Primary Flat Length | 15.9 mm±1.7 mm, 22.2 mm±3.2 mm, 32.5 mm±2.0 mm, 47.5 mm±2.5 mm |
| 次定位边长度 Secondary Flat Length | 8.0 mm±1.7 mm, 11.2 mm±1.5 mm, 18.0mm±2.0 mm, -----, |
| 次定位边方向 Secondary Flat Orientation | Silicon face up: 90° CW. from Prime flat ±5.0° |
| 边缘 Edge exclusion | 3 mm |
| 总厚度变化/弯曲度/翘曲度 TTV/Bow /Warp | ≤15μm /≤25μm /≤40μm |
| 表面粗糙度 Roughness | Polish Ra≤1 nm |
| CMP Ra≤0.5 nm |
裂纹(强光灯观测)
Cracks by high intensity light | None | None | 1 allowed, ≤1 mm |
六方空洞(强光灯观测)
Hex Plates by high intensity light | Cumulative area≤1 % | Cumulative area≤1 % | Cumulative area≤3 % |
多型(强光灯观测)
Polytype Areas by high intensity light | None | Cumulative area≤2 % | Cumulative area≤5% |
划痕(强光灯观测)
Scratches by high intensity light | 3 scratches to 1× wafer diameter
cumulative length | 5 scratches to 1× wafer diameter
cumulative length | 8 scratches to 1× wafer diameter
cumulative length |
| 崩边 Edge chip | None | 3 allowed, ≤0.5 mm each | 5 allowed, ≤1 mm each |
表面污染物(强光灯观测)
Contamination by high intensity light | None |